 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APTGT35H120T3 Full - Bridge Trench IGBT Power Module 13 14 (R) VCES = 1200V IC = 35A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability Q1 18 19 CR1 CR3 Q3 11 10 22 23 Q2 7 8 CR4 Q4 26 27 CR2 4 3 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C A V W 70A@1150V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTGT35H120T3 - Rev 0 September, 2004 Parameter Collector - Emitter Breakdown Voltage Max ratings 1200 55 35 70 20 208 Unit V APTGT35H120T3 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES ICES VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Collector - Emitter Breakdown Voltage Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0V, IC = 1.5mA VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 35A Tj = 125C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 35A R G = 27 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 35A R G = 27 1200 Typ Max 5 2.1 6.5 400 Max Unit V mA V V nA Unit nF 5.0 1.7 2.0 5.8 Dynamic Characteristics Min Typ 2.5 0.15 90 30 420 70 90 50 520 90 3.5 4.1 ns ns mJ Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 70C Min 1200 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage VR=1200V 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 30 2.0 2.3 1.8 370 500 660 3450 2.5 V Qrr Reverse Recovery Charge nC APT website - http://www.advancedpower.com 2-5 APTGT35H120T3 - Rev 0 September, 2004 trr Reverse Recovery Time ns APTGT35H120T3 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.6 1.2 150 125 100 4.7 110 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 To heatsink M4 Package outline 1 12 APT website - http://www.advancedpower.com 3-5 APTGT35H120T3 - Rev 0 September, 2004 17 28 APTGT35H120T3 Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 70 60 50 IC (A) T J=125C T J = 125C 80 70 60 IC (A) TJ =25C VGE =17V V GE =13V VGE=15V V GE =9V 50 40 30 20 10 0 0 0.5 1 1.5 2 V CE (V) 40 30 20 10 0 0 1 2 VCE (V) 2.5 3 3.5 3 4 Transfert Characteristics 70 60 50 IC (A) 40 30 20 10 0 5 6 7 8 9 VGE (V) 10 11 12 T J=25C T J=125C Energy losses vs Collector Current 8 7 6 E (mJ) 5 4 3 2 1 0 0 10 20 30 40 IC (A) Reverse Safe Operating Area 80 70 60 IC (A) 50 40 30 20 VGE=15V T J=125C RG=27 V CE = 600V V GE = 15V RG = 27 T J = 125C Eoff Eon 50 60 70 80 Switching Energy Losses vs Gate Resistance 8 7 6 E (mJ) 5 4 3 2 25 45 65 85 Gate Resistance (ohms) 105 VCE = 600V VGE =15V IC = 35A T J = 125C Eon Eoff 10 0 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 0.7 APT website - http://www.advancedpower.com 4-5 APTGT35H120T3 - Rev 0 September, 2004 0.9 APTGT35H120T3 Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80 VCE=600V D=50% RG =27 TJ =125C TC=75C ZCS Forward Characteristic of diode 80 70 60 50 IC (A) 40 30 20 TJ=125C TJ=25C 60 ZVS 40 20 hard switching 10 0 20 30 IC (A) 40 50 60 0 0.5 1 1.5 VF (V) 0 0 10 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 Diode 0.9 0.7 0 0.00001 rectangular Pulse Duration (Seconds) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT35H120T3 - Rev 0 September, 2004 |
Price & Availability of APTGT35H120T3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |